Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d84a50db454e9e73fb2442f98bad065d http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6b822ee046eb6c45d1e3bd9ce9c1782e http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_ca970c1a1e1e9f6facca2664261763ed http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_39e531d24511e663514e673c6d2663f4 http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c0e3687553467f6b262e5c974ef315c4 http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c6ac97cccd6b52f967c874bde337f1fc http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_9e78755580dc87ada6b52e18a60f3c46 |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1225 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1225 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7869 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78696 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-477 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66969 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G02F1-1362 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H05B44-00 |
filingDate |
2010-07-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate |
2014-12-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f11acf389f47460db4fc78d8b9d01dd4 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6cc83b2506544edb5388c8d0563a4532 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_62a68502d196ad00a7916beeeb18c523 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_76ae29291060dcfcc3ca6ed7f6318c76 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2ac025bd8858048700effe980d44409d http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b03c46b4fd8d6e3f5956ac2f9a6959e4 |
publicationDate |
2014-12-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
US-8900916-B2 |
titleOfInvention |
Method for manufacturing semiconductor device including oxide semiconductor film |
abstract |
A highly reliable semiconductor device which includes a thin film transistor having stable electric characteristics, and a manufacturing method thereof. In the manufacturing method of the semiconductor device which includes a thin film transistor where a semiconductor layer including a channel formation region is an oxide semiconductor layer, heat treatment which reduces impurities such as moisture to improve the purity of the oxide semiconductor layer and oxidize the oxide semiconductor layer (heat treatment for dehydration or dehydrogenation) is performed. Not only impurities such as moisture in the oxide semiconductor layer but also those existing in a gate insulating layer are reduced, and impurities such as moisture existing in interfaces between the oxide semiconductor layer and films provided over and under and in contact with the oxide semiconductor layer are reduced. |
isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11437523-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10243005-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10061172-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11728350-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11296120-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9570626-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9530804-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2022037153-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10310348-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10096719-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11152493-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2022005536-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-RE48290-E http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10741694-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11749365-B2 |
priorityDate |
2009-07-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |