| abstract |
An amorphous oxide semiconductor thin film that is insoluble in a phosphoric acid-based etching solution and soluble in an oxalic acid-based etching solution by optimizing the amounts of indium, tin, and zinc, and a method for producing the same The purpose is to provide. An image display device includes a glass substrate, a liquid crystal as a light control element, a bottom gate type thin film transistor for driving the liquid crystal, a pixel electrode, and a counter electrode. The amorphous oxide semiconductor thin film 2 of the thin film transistor 1 has a carrier density of less than 10 +18 cm −3 , is insoluble in a phosphoric acid-based etching solution, and can be used in an oxalic acid-based etching solution. It is melted. [Selection] Figure 6 |