http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101761804-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66742 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7869 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78696 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 |
| filingDate | 2011-11-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2017-08-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2017-08-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-101761804-B1 |
| titleOfInvention | Thin film transistor and Method of manufacturing the same |
| abstract | The present invention relates to a thin film transistor and a method of manufacturing the same. The thin film transistor includes a gate electrode, a source electrode and a drain electrode spaced apart from each other in the vertical direction and spaced apart from each other in the horizontal direction, and a source electrode formed between the gate electrode and the source electrode and the drain electrode A thin film transistor including a gate insulating film, a gate insulating film, and an active layer formed between the source electrode and the drain electrode, wherein the active layer is formed of at least two doped ZnO thin films, and a manufacturing method thereof. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2021228359-A1 |
| priorityDate | 2011-11-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 45.