| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_646018b7183a929bbb6e26dcdb62a8da |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0103
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0105
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-01049 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02172
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-30604
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78618
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7869 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-306
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 |
| filingDate |
2016-12-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5625eab74774ef7810350a4682916ad5
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0abaaad778375be064f899c7953515ed
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a8e16aa82385ec94a7336667005485e7 |
| publicationDate |
2017-08-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-20170090995-A |
| titleOfInvention |
Semiconductor device and manufacturing method of semiconductor device |
| abstract |
An object of the present invention is to improve the characteristics of a semiconductor device (thin film transistor). As a means for solving such a problem, a semiconductor device comprises a gate electrode (GE) formed on a substrate (SUB), a first metal oxide semiconductor film (MO1) formed thereon via a gate insulating film (GI) And the source and drain electrodes SD formed on the second metal oxide semiconductor film MO2. Then, the end portion of the first metal oxide semiconductor film MO1 is retracted from the end portion of the second metal oxide semiconductor film MO2. According to this structure, the distance between the first metal oxide semiconductor film MO1 and the source and drain electrodes SD in the lower layer can be secured. As a result, it is possible to prevent a short circuit between the source and drain electrodes SD and the first metal oxide semiconductor film MO1 in the lower layer, and the transistor characteristics can be improved. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2020036327-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-102276687-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20200020394-A |
| priorityDate |
2016-01-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |