| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_2d88e83cc5865546f912f9affe47e6ea
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c30a9a67de710d2217c442ccd9f00309
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_9e78755580dc87ada6b52e18a60f3c46
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6b822ee046eb6c45d1e3bd9ce9c1782e |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-124
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1255
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1248
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1214
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1225
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4908
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7869
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-45
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1251 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-04 |
| filingDate |
2010-08-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2013-02-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_287f47b00010944032ff9e66981a9256
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ab728f36bfd6ce1ac262f015d70ad02b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_096dea341a2c409bb1fd2237a66e5892 |
| publicationDate |
2013-02-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-8384085-B2 |
| titleOfInvention |
Semiconductor device and method for manufacturing the same |
| abstract |
An object is to provide a semiconductor device in which characteristics of a driver circuit portion are improved while the aperture ratio of a pixel portion is increased. Alternatively, it is an object to provide a semiconductor device with low power consumption or to provide a semiconductor device in which the threshold voltage of a transistor can be controlled. The semiconductor device includes a substrate having an insulating surface, a pixel portion provided over the substrate, and at least some of driver circuits for driving the pixel portion. A transistor included in the pixel portion and a transistor included in the driver circuit are top-gate bottom-contact transistors. Electrodes and a semiconductor layer of the transistor in the pixel portion have light-transmitting properties. The resistance of electrodes in the driver circuit is lower than the electrodes included in the transistor in the pixel portion. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9754971-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2018146151-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11355529-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9818820-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9564537-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9614101-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9960193-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20160126720-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9165955-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10367013-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2016315099-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9911767-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10218929-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9331206-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10242618-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11726376-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2013105789-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10051219-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10763282-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10249651-B2 |
| priorityDate |
2009-08-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |