Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6b822ee046eb6c45d1e3bd9ce9c1782e |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1251 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1237 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78648 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78645 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78603 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-124 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1225 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7869 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78696 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-12 |
filingDate |
2020-08-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate |
2022-06-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f457e7dc5f3c1a3cf1666f0a67cb5861 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_71d50a7293caba9c14997027f9784f5a http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_21747acfb77b0d181ab4dff0d66658d4 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_485cc24d067050c1f2b6daf41b6dd1f8 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7cd2d315ace78bc003abac8b461ec80e http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f27cd0472813d308f51d664fbe748bc5 |
publicationDate |
2022-06-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
US-11355529-B2 |
titleOfInvention |
Semiconductor device |
abstract |
A semiconductor device including an oxide semiconductor in which on-state current is high is provided. The semiconductor device includes a first transistor provided in a driver circuit portion and a second transistor provided in a pixel portion; the first transistor and the second transistor have different structures. Furthermore, the the first transistor and the second transistor are transistors having a top-gate structure. In an oxide semiconductor film of each of the transistors, an impurity element is contained in regions which do not overlap with a gate electrode. The regions of the oxide regions. Furthermore, the regions of the oxide semiconductor film which contain the impurity element are in contact with a film containing hydrogen. The first transistor provided in the driver circuit portion includes two gate electrodes between which the oxide semiconductor film is provided. |
isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11693288-B2 |
priorityDate |
2014-02-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |