| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_09ccbe9fad9d9f9571248ae403f60636
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6b822ee046eb6c45d1e3bd9ce9c1782e |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0605
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823807 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1214
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1225
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0605
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-092
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1229
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1251
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823807
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-8258 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-04 |
| filingDate |
2011-05-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2014-03-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a3bbad48d38b175956546d3fa5185be1 |
| publicationDate |
2014-03-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-8664658-B2 |
| titleOfInvention |
Semiconductor device |
| abstract |
An n-channel transistor or a p-channel transistor provided with a second gate electrode for controlling a threshold voltage in addition to a normal gate electrode is used for a complementary logic circuit. In addition, an insulated gate field-effect transistor with an extremely low off-state current is used as a switching element to control the potential of the second gate electrode. A channel formation region of the transistor which functions as a switching element includes a semiconductor material whose band gap is wider than that of a silicon semiconductor and whose intrinsic carrier density is lower than that of silicon. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10741590-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11574937-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10325966-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10121905-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10170600-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10763282-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11063066-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10090332-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2017358610-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10181424-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2013207110-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9991887-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11355529-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8937311-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11696481-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11101333-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10367013-B2 |
| priorityDate |
2010-05-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |