| abstract |
An object of the present invention is to provide a semiconductor device having a high aperture ratio or a method for manufacturing the same. Another object of the present invention is to provide a semiconductor device with low power consumption or a method for manufacturing the same. A gate wiring comprising a semiconductor layer formed on a substrate having an insulating surface, a gate insulating film covering the semiconductor layer, and a gate electrode stacked with a first conductive layer and a second conductive layer formed on the gate insulating film, the semiconductor layer and the gate electrode an insulating film covering the gate wiring comprising: a source wiring including a source electrode formed on the insulating film, electrically connected to the semiconductor layer, and stacked with a third conductive layer and a fourth conductive layer, the gate electrode comprising: It is formed of one conductive layer, the gate wiring is formed of a first conductive layer and a second conductive layer, the source electrode is formed of a third conductive layer, and the source wiring is formed of a third conductive layer and a fourth conductive layer. . |