| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6b822ee046eb6c45d1e3bd9ce9c1782e |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1225 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66742
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02664
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66969
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78693
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7869
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02565
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-477
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1225
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78606
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-383
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-46 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-16 |
| filingDate |
2013-03-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2014-01-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a5d9cf7ff1e489b8fdf9960789a811c8
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4d9fd808efd8fa0d7b32a363c0f4d667
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_21747acfb77b0d181ab4dff0d66658d4
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f276d519ba89eed523a468701f069b6c |
| publicationDate |
2014-01-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-8623698-B2 |
| titleOfInvention |
Method for manufacturing semiconductor device |
| abstract |
An object is to manufacture a highly reliable semiconductor device including a thin film transistor with stable electric characteristics. In a method for manufacturing a semiconductor device including a thin film transistor in which an oxide semiconductor film is used for a semiconductor layer including a channel formation region, heat treatment (for dehydration or dehydrogenation) is performed to improve the purity of the oxide semiconductor film and reduce impurities including moisture or the like. After that, slow cooling is performed under an oxygen atmosphere. Besides impurities including moisture or the like exiting in the oxide semiconductor film, heat treatment causes reduction of impurities including moisture or the like exiting in a gate insulating layer and those in interfaces between the oxide semiconductor film and films which are provided over and below the oxide semiconductor and in contact therewith. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9034104-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9461181-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10593710-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11296120-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11756966-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11056515-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2014073086-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8946097-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11581427-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2017005204-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9093262-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10186619-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11152493-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9577108-B2 |
| priorityDate |
2009-06-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |