| abstract |
PROBLEM TO BE SOLVED: To control oxygen vacancy defects at a semiconductor film or an interface between a semiconductor film and an insulating film in a conventional thin film transistor using an oxide semiconductor film, and to have reproducibility and reliability of electric characteristics of the thin film transistor. It was low. According to the structure of a thin film transistor 100, oxidation treatment (plasma treatment or the like) 131, 132 is continuously performed between the oxide semiconductor film 14 and the insulating films 12, 18 without being exposed to the atmosphere. Apply. It is possible to control defects due to oxygen vacancies (defects that generate excess electron donors) at the oxide semiconductor film 14, the insulating films 12 and 18, or their interfaces. By actively suppressing a portion where a defect is unnecessary, the characteristics of the thin film transistor 100 having a good on-off ratio of drain current and excellent reproducibility and reliability are realized. [Selection] Figure 8 |