| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_80787665b837ed3eb503bbcd27c0043a |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K50-81
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02617
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02554
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02565
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K59-1213 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-05
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-40111
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B20-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1225
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7869
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B20-20 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 |
| filingDate |
2008-12-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_74c542ed0006569516bb4ed4e97cd95b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7f99f2170a8cf3bd7f9051a05f3f19bb
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_17918df02e2ccfa465d3578db94f6474 |
| publicationDate |
2010-06-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2010140919-A |
| titleOfInvention |
Oxide semiconductor device, manufacturing method thereof, and active matrix substrate |
| abstract |
PROBLEM TO BE SOLVED: There is a problem that it is difficult to reduce the work function and contact resistance between an oxide semiconductor thin film transistor such as indium gallium zinc oxide and zinc tin oxide and a metal electrode material. Could not make full use of. A phenomenon in which contact resistance between an oxide semiconductor and a metal is changed depending on a ratio of oxygen added in a gas introduced when forming an oxide semiconductor such as indium gallium zinc oxide or zinc tin oxide is used. Although the contact resistance can be suppressed when the ratio of the added oxygen is 10% or more, the threshold potential shift tends to increase in the opposite direction, so that the region from the surface where the metal and the oxide semiconductor are in contact to the depth direction is at least 3 nm. As a multilayer structure in which the contact layer is formed with the above-mentioned additive oxygen ratio of 10% or more, and the region serving as the main channel layer is formed with the additive oxygen ratio of 10% or less, ohmic contact with the electrode metal, threshold potential shift It is compatible with both reliability such as suppression. [Selection] Figure 3 |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11199920-B2
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http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2015228366-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10249626-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2012023226-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10656799-B2 |
| priorityDate |
2008-12-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |