| abstract |
A method of manufacturing a ZnO semiconductor thin film and a ZnO thin film transistor, and a ZnO thin film transistor to which the method is applied. A step of forming a ZnO thin film on a substrate in an oxygen atmosphere, a step of forming an oxygen diffusion layer of an oxygen-affinity metal on the ZnO thin film, a heat treatment of the ZnO thin film and the oxygen diffusion layer, and a ZnO thin film And a step of diffusing oxygen contained in the oxygen diffusion layer. A method for producing a ZnO semiconductor thin film. Also, a semiconductor channel formed of ZnO, a source electrode and a drain electrode provided on both sides of the semiconductor channel and having a conductive oxygen diffusion layer made of an oxygen-affinity metal in contact with the semiconductor channel, and the semiconductor channel A ZnO thin film transistor comprising: a gate for forming an electric field; and a gate insulating layer interposed between the gate and the semiconductor channel. [Selection figure] None |