| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e408fc900acc0c4a95951456b32d48a5
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d84a50db454e9e73fb2442f98bad065d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6b822ee046eb6c45d1e3bd9ce9c1782e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_276f771a9246876a7159097019fbe9fc |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-458
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1225 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7869
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78696
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-24
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4908
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-45
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1225 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-34 |
| filingDate |
2011-11-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2012-10-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4d9f2d2c88a25283e8d54b9787e5b2d5
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_654fea521506c6d84b8fdb3e91c12f9d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c6e1d5b64ee7f52e36d2bfd6e3cd52db |
| publicationDate |
2012-10-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-8298858-B2 |
| titleOfInvention |
Semiconductor device and method for manufacturing the same |
| abstract |
An object is to increase field effect mobility of a thin film transistor including an oxide semiconductor. Another object is to stabilize electrical characteristics of the thin film transistor. In a thin film transistor including an oxide semiconductor layer, a semiconductor layer or a conductive layer having higher electrical conductivity than the oxide semiconductor is formed over the oxide semiconductor layer, whereby field effect mobility of the thin film transistor can be increased. Further, by forming a semiconductor layer or a conductive layer having higher electrical conductivity than the oxide semiconductor between the oxide semiconductor layer and a protective insulating layer of the thin film transistor, change in composition or deterioration in film quality of the oxide semiconductor layer is prevented, so that electrical characteristics of the thin film transistor can be stabilized. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10014414-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9473714-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10103277-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9166061-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9559213-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11139322-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8772784-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9722054-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10916663-B2 |
| priorityDate |
2008-11-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |