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filingDate 2014-04-16-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2016-06-27-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationDate 2016-06-27-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-101633700-B1
titleOfInvention Semiconductor device and method for manufacturing the semiconductor device
abstract One of the purposes is to suppress deterioration of device characteristics even when an oxide semiconductor is formed after formation of the gate insulating layer, the source electrode layer, and the drain electrode layer. A gate electrode layer is formed on a substrate, a gate insulating layer is formed on the gate electrode layer, a source electrode layer and a drain electrode layer are formed on the gate insulating layer, the surface of the gate insulating layer, the source electrode layer and the drain electrode layer formed on the substrate is subjected to surface treatment After the surface treatment, the oxide semiconductor layer is formed on the gate insulating layer, the source electrode layer, and the drain electrode layer.
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