| abstract |
The present invention relates to a method for manufacturing an oxide thin film transistor device, the method comprising a substrate, a gate electrode, a gate insulating film, a source and a drain electrode, and a semiconductor thin film manufacturing method of the oxide thin film transistor, the gate insulating film or a semiconductor thin film Is patterned through a helicon plasma dry process using a specific etching gas, wherein the specific etching gas includes argon / chlorine, argon / chlorine / methane fluoride or argon / chlorine / fluoride methane / oxygen Characterized in that using a mixed gas. Accordingly, the present invention can easily dry etch the gate insulating film or the semiconductor thin film through the helicon plasma dry etching process using the above-described etching gas, and various structures using the dry etching process rather than the conventional wet etching process. In the manufacture of the oxide thin film transistor having a process convenience and reproducible process conditions can be provided, by improving the etching selectivity of the semiconductor thin film and the gate insulating film layer, it is possible to increase the reliability for the production of the oxide thin film transistor. . |