| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_b2b31f8612f522a744762d83c23879ba |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-882
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67069
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-231 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-115
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8247 |
| filingDate |
2006-11-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2007-11-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_537f49527909b7a5869cdef10ef55949
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_900fc3c94181342352a69cc59cbcd046
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8decb4883d4b1aee42bdf2d7717ac54d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_268170737c7719a6319392e6dd19efa3
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1076203d5378d3603d83eb912073d412
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4c8154c7f25a5bc276ad546106a66b47
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e5841c6aebfbeefb58873b68fcdf6ee5 |
| publicationDate |
2007-11-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-100779099-B1 |
| titleOfInvention |
Method for manufacturing a phase change memory device comprising a GB chalcogenide pattern |
| abstract |
A method of manufacturing a phase change memory device is provided. The present invention includes forming a GST chalcogenide layer used as a phase change material on a semiconductor substrate. A hard mask pattern is formed on the GST chalcogenide layer. A helical plasma dry etching apparatus using a mixed gas of argon gas and carbon tetrafluoride gas as an etching gas, wherein the GST chalcogenide layer is formed by using the hard mask pattern having a high etching selectivity with respect to the GST chalcogenide layer as an etching mask. Dry etching to form a GST chalcogenide pattern. The hard mask pattern may be formed of a titanium nitride pattern. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100968888-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100814901-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100960011-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8445887-B2 |
| priorityDate |
2006-08-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |