| abstract |
The present invention produces a transistor having excellent electric characteristics. After forming an oxide insulating film on the substrate, forming an oxide semiconductor film on the oxide insulating film, desorbing hydrogen contained in the oxide semiconductor film, heating the oxide insulating film to a temperature at which a part of oxygen contained in the oxide insulating film is desorbed, An oxide semiconductor film is etched in a predetermined shape to form an island-shaped oxide semiconductor film, a pair of electrodes is formed on the island-shaped oxide semiconductor film, a gate insulating film is formed on the pair of electrodes and the island- And a gate electrode is formed on the gate insulating film. |