| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_624dad662bed784c374bf586cb9d8619
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_66d2a980e3c66afef6c0c5c1b2a65200
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_66c6e933335511be11806b1154d5a5b3
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6b822ee046eb6c45d1e3bd9ce9c1782e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c6daf635d4910a8456c36c27cf63dd3c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_b0845920df684539ad2315e1daf12a3e |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7869
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02686
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78603
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78606
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66969
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02554
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02565
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02488
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02422
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02631 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-66
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-36
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 |
| filingDate |
2012-06-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2016-11-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a93d5c7aed3a2b0d0a332532d324cc87
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_90158e02e595beb5b5283c55b80b46df
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e80622db1440b4609dcbc5a40eda0a1b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_102c3d06127488a22042bb6626d32a72
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ee8befc8bc275421cb4ec94c54f41f67 |
| publicationDate |
2016-11-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-9496138-B2 |
| titleOfInvention |
Method for manufacturing oxide semiconductor film, method for manufacturing semiconductor device, and semiconductor device |
| abstract |
In an oxide semiconductor film formed over an insulating surface, an amorphous region remains in the vicinity of the interface with the base, which is thought to cause a variation in the characteristics of a transistor and the like. A base surface or film touching the oxide semiconductor film is formed of a material having a melting point higher than that of a material used for the oxide semiconductor film. Accordingly, a crystalline region is allowed to exist in the vicinity of the interface with the base surface or film touching the oxide semiconductor film. An insulating metal oxide is used for the base surface or film touching the oxide semiconductor film. The metal oxide used here is an aluminum oxide, gallium oxide, or the like that is a material belonging to the same group as the material of the oxide semiconductor film. |
| priorityDate |
2011-07-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |