http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-102146693-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4908 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78603 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7869 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78696 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66742 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1218 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1225 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78618 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-66 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-49 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-12 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 |
| filingDate | 2019-08-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2020-08-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2020-08-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-102146693-B1 |
| titleOfInvention | Semiconductor device |
| abstract | A semiconductor device having a transistor using an oxide semiconductor having high field effect mobility, small variation in threshold voltage, and having high reliability is provided. A semiconductor device having an insulator substrate for releasing oxygen by heat treatment, an oxide semiconductor film formed on the insulator substrate, and a transistor in which a channel is formed in the oxide semiconductor film. An insulator substrate that releases oxygen by heat treatment can be produced by implanting oxygen ions on at least the side of the insulator substrate where the oxide semiconductor film is formed. |
| priorityDate | 2011-07-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 67.