http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-WO2011151970-A1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-124 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7869 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1255 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1225 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G02F1-136227 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66969 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78618 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G02F1-1368 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 |
| filingDate | 2011-04-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2013-07-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-WO2011151970-A1 |
| titleOfInvention | Contact structure, substrate, display device, and contact structure and method of manufacturing substrate |
| abstract | The TFT 17 is provided on the substrate 3. The TFT 17 includes a gate electrode 31, a gate insulating film 32, a semiconductor 33, a source electrode 34, a drain electrode 35, and a protective film 36. The semiconductor 33 is made of a metal oxide semiconductor, and has a source portion 33 a in contact with the source electrode 34, a drain portion 33 b in contact with the drain electrode 35, and a channel portion 33 c exposed from the source electrode 34 and the drain electrode 35. . A conductive layer 37 having a relatively small electric resistance is formed on each of the source portion 33a and the drain portion 33b. The channel portion 33c has the conductive layer 37 removed. |
| priorityDate | 2010-06-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 28.