Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6b822ee046eb6c45d1e3bd9ce9c1782e http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_01c46f66b35d414b6a70c037dfe4cc0b |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1156 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B41-70 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-108 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-01 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-10844 |
classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-115 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-108 |
filingDate |
2012-02-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate |
2015-03-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_68938e5c02e1597b122c2718e2ef6135 |
publicationDate |
2015-03-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
US-8975680-B2 |
titleOfInvention |
Semiconductor memory device and method manufacturing semiconductor memory device |
abstract |
A highly integrated gain cell-type semiconductor memory is provided. A first insulator, a read bit line, a second insulator, a third insulator, a first semiconductor film, first conductive layers, and the like are formed. A projecting insulator is formed thereover. Then, second semiconductor films and a second gate insulating film are formed to cover the projecting insulator. After that, a conductive film is formed and subjected to anisotropic etching, so that write word lines are formed on side surfaces of the projecting insulator. A third contact plug for connection to a write bit line is formed over a top of the projecting insulator. With such a structure, the area of the memory cell can be 4 F 2 at a minimum. |
isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11183516-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9905700-B2 |
priorityDate |
2011-02-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |