Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6b822ee046eb6c45d1e3bd9ce9c1782e |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1225 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-45 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78621 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78693 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-124 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-26 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7869 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-045 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02554 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02565 |
classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-45 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-26 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-12 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-04 |
filingDate |
2015-05-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate |
2016-10-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_21747acfb77b0d181ab4dff0d66658d4 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f7704ba557cbe048a15ed797336e513a |
publicationDate |
2016-10-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
US-9478603-B2 |
titleOfInvention |
Oxide semiconductor film, transistor, and semiconductor device |
abstract |
To provide an oxide semiconductor film which has high stability and does not easily cause variation in electric characteristics of a transistor, a transistor including the oxide semiconductor film in its channel formation region, and a highly reliable semiconductor device including the transistor. The oxide semiconductor film including indium includes a crystal part whose c-axis is substantially perpendicular to a surface of the oxide semiconductor film. In the crystal part, the length of a crystal arrangement part containing indium and oxygen on a plane perpendicular to the c-axis is more than 1.5 nm. Further, the semiconductor device includes the transistor including the oxide semiconductor film in its channel formation region. |
isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10096628-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11316016-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9704707-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11537019-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2016225620-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11728392-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10942408-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10580641-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10157738-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10043660-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10879360-B2 |
priorityDate |
2012-03-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |