http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78621
Outgoing Links
| Predicate | Object |
|---|---|
| concordantIPC | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 |
| level | 16^^<http://www.w3.org/2001/XMLSchema#integer> |
| symbol | H01L29/78621 |
| modified | 2013-01-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| title | Thin film transistors, with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure with LDD structure or an extension or an offset region or characterised by the doping profile |
| type | http://data.epo.org/linked-data/def/cpc/SubGroup |
| broader | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78618 |
Incoming Links
Total number of triples: 4837.