http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2016218197-A1

Outgoing Links

Predicate Object
assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_099413ae0cf5a2b6398b5151766cd260
classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-324
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66969
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7869
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42384
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66742
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66757
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78666
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78681
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78684
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78618
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-41733
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78621
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-30604
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-417
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-423
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-66
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-324
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-306
filingDate 2015-12-01-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3872ae3f9c2dc1de0e179179ef522fa2
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_15f7c4c27b384c522d7a37d29bc20a84
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_daf536ebae7aa1dce64f38ae4cf4af0a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_db17ae78897146c273ddab77d83eb0a0
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4ed2771a9bab36f968d573282ea11c92
publicationDate 2016-07-28-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-2016218197-A1
titleOfInvention Thin film transistor and method of manufacturing the same
abstract There are provided a method of manufacturing a thin film transistor and a display including a thin film transistor. n The method of manufacturing a thin film transistor includes forming a barrier layer cm a substrate, forming a semiconductor layer on the barrier layer, forming a gate insulating layer on the semiconductor layer, forming a gate electrode on the gate insulating layer, forming an offset region on an external surface of the gate electrode through a plasma heat treatment process or an annealing process, etching, an offset region of the gate electrode, etching a gate insulating layer except for a portion of the gate insulating layer, positioned below the gate electrode, forming an interlayer insulating layer on the gate electrode, and etching, the interlayer insulating layer to form a source electrode and a drain electrode.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2017294544-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-108010920-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10497620-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2023028839-A1
priorityDate 2015-01-26-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

Incoming Links

Predicate Subject
isDiscussedBy http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID14806
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID57350325
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419559192
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID57467804
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419559581
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID297
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID447604988
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID450447625

Total number of triples: 44.