http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-19990030051-A
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G02F1-1368 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78621 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-786 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78696 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32082 |
| classificationIPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G02F1-1368 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 |
| filingDate | 1998-09-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 1999-04-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-19990030051-A |
| titleOfInvention | Method for manufacturing semiconductor device |
| abstract | TECHNICAL FIELD The present invention relates to a method of manufacturing a thin film transistor used in a liquid crystal display device or the like, and is a method for continuously generating plasma for generating impurity ions at predetermined intervals for a predetermined time, and implanting impurity ions into the semiconductor. Further, by changing the duty ratio for generating the plasma, it is possible to control the effective beam current value in a wide range and with high precision without changing the ratio of the ions. As a result, a channel portion and a low-concentration impurity layer of silicon-based field effect transistor can be formed at a low cost with high precision, and a field effect transistor and a liquid crystal display device with high quality and good productivity can be manufactured. |
| priorityDate | 1997-09-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 24.