http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I244213-B
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_73ebc284a55d5daf0e209d6186c9e65c |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2029-7863 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78621 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66757 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-12 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G02F1-136 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-12 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G02F1-1368 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G02F1-136 |
| filingDate | 2004-06-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2005-11-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_09c5957334eb723a6ad6c099bc603f00 |
| publicationDate | 2005-11-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-I244213-B |
| titleOfInvention | Thin film transistor, active matrix substrate, display device and electronic equipment |
| abstract | The present invention provides a thin film transistor which has an off-state current reduced to an extremely low level, and has an outstanding reliability, and is preferably applicable to a pixel driver of a super high definition indicator, peripheral circuits or the like, to provide an active matrix substrate provided with the thin film transistor, and to provide a display. Thin film transistor comprises a semiconductor layer 42 provided on a substrate main body 10a, a gate electrode 32, a drain electrode 17, and a source electrode 16. The semiconductor layer 42 is connected with the drain electrode 17. It is so constituted that there are provided a high concentration drain region 1e where impurity is heavily diffused, a low concentration drain region 1c provided at the gate electrode 32 side of the high concentration drain region 1e where the impurity is lightly diffused, and a region provided at the gate electrode 32 side of the low concentration drain region 1c where the impurity is diffused in a minute amount concentration, or alternatively an offset region 1a2 set as an intrinsic semiconductor region. |
| priorityDate | 2003-07-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
| Predicate | Subject |
|---|---|
| isDiscussedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID458431896 http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID24857 |
Total number of triples: 23.