http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-5352081-B2
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-127 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1214 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2029-7863 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66757 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42384 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78621 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4908 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-49 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-423 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-417 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 |
| filingDate | 2007-12-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2013-11-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2013-11-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-5352081-B2 |
| titleOfInvention | Method for manufacturing semiconductor device |
| abstract | It is an object to improve operation characteristics and reliability of a semiconductor device. A semiconductor device which includes an island-shaped semiconductor film having a channel-formation region, a first low-concentration impurity region, a second low-concentration impurity region, and a high-concentration impurity region including a silicide layer; a gate insulating film; a first gate electrode overlapping with the channel-formation region and the first low-concentration impurity region with the gate insulating film interposed therebetween; a second gate electrode overlapping with the channel-formation region with the gate insulating film and the first gate electrode interposed therebetween; and a sidewall formed on side surfaces of the first gate electrode and the second gate electrode. In the semiconductor device, a thickness of the gate insulating film is smaller in a region over the second low-concentration impurity region than in a region over the first low-concentration impurity region. |
| priorityDate | 2006-12-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 53.