http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H06275640-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6b822ee046eb6c45d1e3bd9ce9c1782e |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66757 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78621 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 |
| filingDate | 1993-03-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_06c2a67fb99e7382117013c02604c37c http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0f128d9c2440afff71001e59f763b9ed |
| publicationDate | 1994-09-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-H06275640-A |
| titleOfInvention | Thin film transistor and manufacturing method thereof |
| abstract | (57) [Summary] [Object] To provide a crystalline silicon thin film transistor (TFT) having an LDD (lightly doped drain) structure and excellent characteristics, and a method for manufacturing such a TFT. [Structure] A gate insulating film and a gate electrode are formed in an island-shaped semiconductor region, and impurities are injected in a self-aligned manner to form an LDD. Furthermore, after anodizing the gate electrode, Impurities are introduced to form impurity regions (source and drain). After that, a part or all of the anodic oxide on the island-shaped semiconductor region is removed to expose the LDD region, and a laser or strong light equivalent thereto is irradiated to activate the impurity region (including LDD). To do. |
| priorityDate | 1993-03-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 18.