| abstract |
A semiconductor layer having a first region, a second region, a third region, and a channel region into which an impurity element for forming a source or a drain is introduced; and a gate electrode formed so as to partially overlap the semiconductor layer with the gate insulating film therebetween, In the semiconductor layer, the first region is electrically connected to the gate electrode through the first electrode to which the AC signal is inputted, the second region is electrically connected to the capacitor element through the second electrode, and the third region is electrically connected to the gate electrode And the third region is a region containing the impurity element at a lower concentration than the first region and the second region.n n n n Semiconductor device, rectifier circuit, GOLD structure, transistor, diode connection |