http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20080056581-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c16d2144a81bfa32a665dca1e93c3d37 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78621 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66757 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 |
| filingDate | 2006-12-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_75af4edfd31d2c495c1fc651599a0288 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bdaa2d80072f4ca02466672b52050874 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_38ceb95be35bd6ea71ea0f1f69a2ba58 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bd31ed0febeb0d4d8015c38e7317abff |
| publicationDate | 2008-06-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20080056581-A |
| titleOfInvention | Manufacturing Method of Thin Film Transistor |
| abstract | In the method of manufacturing a thin film transistor according to the present invention, forming an amorphous silicon layer on a substrate, crystallizing the amorphous silicon layer to form a polysilicon layer, forming an insulating film on the polysilicon layer, Forming a mask structure including a gate mask and a photoresist layer sequentially formed on the insulating layer to mask a partial region of the polysilicon layer, one end of the polysilicon layer not covered by the mask structure, and Implanting impurities of a first concentration into the other end by an ion beam implantation method to form a source and a drain region and a channel region interposed therebetween in the polysilicon layer; irradiating an ion beam to the photoresist layer to One end and the other end of the gate mask by shrinking the photoresist layer Forming a gate electrode and a gate insulating layer by etching the gate mask and the insulating layer using the contracted photoresist layer as an etch mask and etching the gate mask and the insulating layer in the same width as the contracted photoresist layer; An LDD region is formed by injecting impurities having a second concentration less than the first concentration into one end of the channel region exposed between the insulating layer and the source region and the other end of the channel region exposed between the gate insulating layer and the drain region. Steps. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10325943-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20180020939-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20200024327-A |
| priorityDate | 2006-12-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
| Predicate | Subject |
|---|---|
| isDiscussedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419544408 |
Total number of triples: 19.