| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6b822ee046eb6c45d1e3bd9ce9c1782e |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4908
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78621 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1277
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78675
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3226
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1285
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66757 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-49 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-302
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-77
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-84
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-322
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-461 |
| filingDate |
2003-10-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_aff0bb93c6b0ff0b2e00f58795979679 |
| publicationDate |
2004-05-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2004087156-A1 |
| titleOfInvention |
Method of manufacturing semiconductor device |
| abstract |
In a semiconductor device having a semiconductor film crystallized by using a metal element, it is an object to provide a technique for reducing the crystal defects in a semiconductor film, and a technique for forming a semiconductor film with high crystallinity by effectively removing impurity metal elements. n An amorphous semiconductor film is formed over a transparent substrate; the amorphous semiconductor film is crystallized by using metal elements; a crystalline semiconductor film is irradiated with a first laser beam in a direction from the semiconductor film to the substrate, thereby partly melted and crystallized; and the semiconductor film is irradiated with a second laser beam through the substrate in a direction from the substrate film to the semiconductor film. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2011189805-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2011063932-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2006148217-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8658516-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7381600-B2 |
| priorityDate |
2002-10-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |