http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8658516-B2
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d2b95252bd721206a4e80a9d4e5c7ad9 http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d79a3714d75520adeea100b7ed428a77 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B23K2103-56 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B23K26-53 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B23K26-0676 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-268 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-14683 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3221 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B23K26-0006 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-322 |
| filingDate | 2011-01-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2014-02-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9f956fea8548b66b60b9b10242498360 |
| publicationDate | 2014-02-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | US-8658516-B2 |
| titleOfInvention | Method of producing silicon wafer, epitaxial wafer and solid state image sensor, and device for producing silicon wafer |
| abstract | An object of the present invention is to provide a method of producing a silicon wafer and a method of producing an epitaxial wafer, which enable easily forming a gettering site in a relatively short period of time and effectively suppressing occurrence of dislocation induced by internal stresses. Specifically, the present invention provides a method of producing a silicon wafer, comprising: irradiating a first laser beam having a relatively long wavelength and a second laser beam having a relatively short wavelength onto a portion of a silicon wafer located at a predetermined depth measured from a surface of the silicon wafer, wherein the first laser beam is concentrated at a portion located at a predetermined depth of the wafer to form a process-affected layer for gettering heavy metals thereat, the second laser beam is concentrated at a beam-concentration portion in the vicinity of the surface of the wafer to melt the beam-concentration portion, the beam-concentration portion is then recrystallized. |
| priorityDate | 2010-01-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 35.