http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2003110105-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5547f741b25666fc4ae5195cf71a979b |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2029-7863 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78696 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66772 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78612 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78621 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-26586 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-265 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 |
| filingDate | 2001-10-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_913fcc559e48c697c654f2df48538e60 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_84dccbeb752c016334aabb3053db9cc6 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6ded5a83ed49de9cb2e6bdb25902a243 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c48f01244b83311c162b825103b44db8 |
| publicationDate | 2003-04-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2003110105-A |
| titleOfInvention | Semiconductor device and method of manufacturing the same |
| abstract | (57) [Summary] [PROBLEMS] To realize a fully depleted operation and suppress a decrease in threshold voltage. The semiconductor device includes a first insulating layer, a semiconductor layer formed on the upper surface of the first insulating layer, and a second insulating layer formed on the upper surface of the semiconductor layer. The semiconductor layer has channel regions 5 and 6 and source / drain regions 3 formed in regions outside the channel regions 5 and 6. The channel region includes a low-concentration region 5 and a high-concentration region 6 formed in a region outside the low-concentration region 5 and having an impurity concentration higher than that of the low-concentration region 5. It is essentially important that the width of the high concentration region 6 is 30 nm or less. The width of the high concentration region 6 is 30 nm If it is less than or equal to, the operation of the complete depletion type is realized, and the decrease in the threshold voltage is suppressed. If the impurity concentration of the high-concentration region 6 is lower than 1/10 of the impurity concentration at the end of the source / drain region at a position 30 nm inside the end of the source / drain region, the complete depletion type operation is more effectively realized, In addition, a decrease in the threshold voltage is more effectively suppressed. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2010062173-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2008166724-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8853782-B2 |
| priorityDate | 2001-10-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
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