http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2009200480-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6b822ee046eb6c45d1e3bd9ce9c1782e |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-458 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66772 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78621 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76254 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-84 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-12 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-265 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 |
| filingDate | 2009-01-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7dec4d1ff9bbf4d655bc09a747cbae06 |
| publicationDate | 2009-09-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2009200480-A |
| titleOfInvention | Manufacturing method of semiconductor substrate |
| abstract | An object is to improve the flatness of a semiconductor layer surface in a semiconductor substrate. Another object is to improve the productivity of a semiconductor substrate. A surface of a single crystal semiconductor substrate is irradiated with ions to form a damaged region, an insulating layer is formed on the surface of the single crystal semiconductor substrate, and the surface of the substrate having the insulating surface and the surface of the insulating layer The single crystal semiconductor layer is separated from the single crystal semiconductor substrate in the damaged region by attaching the substrate having the insulating surface and the single crystal semiconductor substrate to each other, and performing heat treatment. A plurality of island-like semiconductor layers are formed by patterning the single crystal semiconductor layer, and one of the island-like semiconductor layers is irradiated with a laser beam shaped so as to cover the entire surface of the island-like semiconductor layer. [Selection] Figure 2 |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-7041648-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2021018998-A |
| priorityDate | 2008-01-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 49.