| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1ee8c3751d7e78666a0707dd681e768b |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G02F2202-10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G09G3-3688
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G09G3-3677 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78621
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1285
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G02F1-1368
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78609
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78606
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1225
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1229
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-24
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78693
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7869
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-428
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78696
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66969 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G02F1-1368
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-24
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-66 |
| filingDate |
2019-04-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_308b193f5ba978de666d5405a45e002a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_83eff96dbc7a6aff9500277f6efc6aee
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2911cb81f5ede6b1592c5a3437ffdfd0
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4ca60e3b6862a862ec019392ea5dfa7d |
| publicationDate |
2020-01-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2020006396-A1 |
| titleOfInvention |
Thin film transistor, display device and method for manufacturing thin film transistor |
| abstract |
A thin film transistor includes: a gate electrode supported on a substrate; a gate insulating layer that covers the gate electrode; an oxide semiconductor layer provided on the gate insulating layer and having a crystalline region, the crystalline region including a first region, a second region, and a channel region located between the first region and the second region, wherein the channel region, the first region and the second region overlap with the gate electrode with the gate insulating layer interposed therebetween; a protection insulating layer arranged on the oxide semiconductor layer so that the channel region is covered and the first region and the second region are exposed; a source electrode electrically connected to the first region; and a drain electrode electrically connected to the second region, wherein a crystallinity of the channel region is different from a crystallinity of the first region and the second region. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2021091233-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11133333-B2 |
| priorityDate |
2018-06-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |