http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-200425522-A

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filingDate 2003-05-15-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_309b00457e134195dba5066cf74a480c
publicationDate 2004-11-16-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber TW-200425522-A
titleOfInvention Method for forming LDD of semiconductor devices
abstract A method for forming an LDD of a semiconductor device is described. A substrate having a polysilicon layer thereon is provided, wherein the polysilicon layer comprises a first region and a second region. A photoresist layer is formed on the polysilicon layer for exposing the first region-and covering the second region. The photoresist layer covering the second region comprises a middle portion and an edge portion, wherein the middle portion is thicker than the edge portion. Then, an implantation process is performed by using the photoresist layer as a mask for forming a source/drain in the first region of the polysilicon layer and forming a LDD in the polysilicon layer covered by the edge portion of the photoresist layer.
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