http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20060015234-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c5520dd38cc403678d9f91e0b0ee95fb |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1214 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1288 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G02F1-136 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-127 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4908 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78621 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-423 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-49 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-417 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G09F9-30 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G02F1-136 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G02F1-1368 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 |
| filingDate | 2004-12-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7bc7695a61042c18d3aa3b9c18c67c8e |
| publicationDate | 2006-02-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20060015234-A |
| titleOfInvention | Thin film transistor device and manufacturing method thereof |
| abstract | In a thin film transistor device having a low voltage driving TFT with a thin gate insulating film and a high voltage driving TFT with a thick gate insulating film, the gate electrode and the source / drain electrode of the high voltage driving TFT can be formed of a low resistance metal such as an Al alloy, and also thermally activated. Provided are a thin film transistor device capable of activating impurities by a process and a method of manufacturing the same. A first insulating film 117 is formed, and a mask film is formed on the first insulating film 117 to cover a region serving as a channel of the gate electrode 118 and the high voltage driving TFT of the low voltage driving TFT by the Mo film. Impurity is implanted into the semiconductor film 115 using the mask 118 and the mask film as a mask to form the highly concentrated impurity regions 122 and 124. Thereafter, for example, heat treatment is performed at 500 ° C. for 2 hours to activate impurities. Subsequently, the mask film is removed, the second insulating film 126 is formed, and the gate electrode 127 of the high voltage driving TFT is formed thereon by Al alloy.n n n n Gate insulating film, low voltage driving TFT, high voltage driving TFT, low resistance metal, mask film, gate electrode, channel, activation |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-107408510-B http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-107408510-A |
| priorityDate | 2004-08-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 30.