http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9985056-B2
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6b822ee046eb6c45d1e3bd9ce9c1782e |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7869 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78696 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66969 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1218 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1222 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1225 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1288 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-127 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78648 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78621 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-12 |
| filingDate | 2016-10-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2018-05-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_485cc24d067050c1f2b6daf41b6dd1f8 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_21747acfb77b0d181ab4dff0d66658d4 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_58662e7d58dded66817b1df7de0c037c |
| publicationDate | 2018-05-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | US-9985056-B2 |
| titleOfInvention | Semiconductor device and method for manufacturing semiconductor device |
| abstract | In a semiconductor device including an oxide semiconductor, a change in electrical characteristics is suppressed and reliability is improved. A miniaturized transistor including an oxide semiconductor is provided. A method for manufacturing a semiconductor device including an oxide semiconductor film includes the following steps: forming an oxide semiconductor film; forming an insulating film over the oxide semiconductor film; forming a conductive film over the insulating film; forming a first protective film over the conductive film; and forming a second protective film over the first protective film. The first protective film, the conductive film, and the insulating film are processed using the second protective film as a mask. After the second protective film is removed, the conductive film and the insulating film are processed using the first protective film as a mask to have a smaller area than that of the second protective film. |
| priorityDate | 2015-10-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 101.