http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-2235754-A2
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_a8a9982b1666c54b5bf02d6c944891e4 http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_a9d6dc20da722a6abf8b4b0d6c3c8846 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K59-1213 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78621 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-861 |
| filingDate | 2009-01-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ee9dc784bbb55fe5d2375d010e69440c http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_da3cf10d9a24136c47c4a93be4cd0552 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c450a23a4b88ff5e9d0e6fec792d5fba |
| publicationDate | 2010-10-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | EP-2235754-A2 |
| titleOfInvention | Thin film transistor having long lightly doped drain on soi substrate and process for making same |
| abstract | Methods and apparatus for producing a thin film transistor (TFT) result in: a glass or glass ceramic substrate; a single crystal semiconductor layer; a source structure disposed on the single crystal semiconductor layer; a drain structure disposed on the single crystal semiconductor layer; and a gate structure located with respect to the drain structure defining a lightly doped drain region therein, wherein a lateral length of the lightly doped drain region is such that the TFT exhibits a relatively low carrier mobility and moderate sub-threshold slope suitable for OLED display applications. |
| priorityDate | 2008-01-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 23.