| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_0950e9df7f0e1b73efee1bda859951ad |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S438-909 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66757
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66765
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78621
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1214
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1288
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-786 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-302
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-77
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-268
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-265
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-26
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-22
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-84
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G02F1-1368
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G02F1-136 |
| filingDate |
1999-07-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2001-10-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ef7e4562dde946303efcd3dd10b1e22b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_31c73ad3cb7d52535cce1b2300eb2ffc
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c15c326e496a0ab52419ab4ac40357da |
| publicationDate |
2001-10-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-460742-B |
| titleOfInvention |
Method for manufacturing semiconductor device |
| abstract |
This invention provides a method for manufacturing semiconductor device and the required apparatus. In manufacturing a thin-film transistor on a glass substrate 10, a first thin film 30 consisting of an amorphous silicon thin film is formed on the glass substrate, and a second thin film 53 is formed on the first thin film. Then, this second thin film is etched to form a mask pattern 54. The first thin film 27 is implanted doping ion through the mask pattern to form a source region and a drain region. The process of forming the mask pattern 54 and the process of forming the source 31 and drain 33 regions are carried out continuously without exposing the substrate to the atmosphere. |
| priorityDate |
1998-07-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |