| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6b822ee046eb6c45d1e3bd9ce9c1782e |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1277 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78621
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66757 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-265
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 |
| filingDate |
1994-06-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_17034c0a0cd556d58590a815a7877db4
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0f128d9c2440afff71001e59f763b9ed
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a80d358369a3a91fdaab2f06adf08bbb
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_87bf75786eeddafc4613ac36c4c987af
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_090d5e6e668ef9f0c44e2fc2656acff0 |
| publicationDate |
1995-12-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-H07335546-A |
| titleOfInvention |
Semiconductor device and manufacturing method thereof |
| abstract |
(57) [Abstract] [Purpose] To reduce defects at the interface between the source / drain region and the channel formation region of a thin film transistor and in the vicinity thereof. [Structure] Impurity ions are implanted into a source region 107 and a drain region 110 using the gate electrode 105 as a mask for the active layer 103 which has been given crystallinity by the action of a catalytic element that promotes crystallization. Then 35 By performing heat treatment at about 0 to 550 ° C., crystal growth is performed from the crystalline region 108, the source region 107 and the drain region 110 are crystallized, and the implanted impurities are activated. As a result, defects due to lattice mismatch can be prevented from being concentrated at the interface between the crystalline region 108, the source region 107, and the drain region 110. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-100444406-C
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6417031-B2 |
| priorityDate |
1994-06-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |