| abstract |
Embodiments of the present disclosure relate to a semiconductor device and a method of fabricating the semiconductor device. The first gate insulating film is an insulating film made of silicon oxide and added with hafnium (Hf) without adding aluminum (Al). Also, the second gate insulating film is an insulating film made of silicon oxide and added with aluminum without adding hafnium. The third gate insulating film is an insulating film made of silicon oxide and added with aluminum. Further, the fourth gate insulating film is an insulating film made of silicon oxide and added with hafnium. Therefore, the power consumption of the semiconductor device can be reduced. |