| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6b822ee046eb6c45d1e3bd9ce9c1782e |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78621
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66969
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66742
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1288
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1214
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1225
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7869 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-50
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-66
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H05B44-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G02F1-1368
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 |
| filingDate |
2018-08-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_62bda92ebb6b753395cadcd2de2ad402
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9886410bf3f0f97c50e0d3ffaf6692f6
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2627974b94ebbe182a376fa15d81bafd
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b262d7ea79b469215fe43890fb3d0bb5
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0f04b01756ccb9e97839c63637f09f6a |
| publicationDate |
2018-08-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-20180091799-A |
| titleOfInvention |
Semiconductor device and liquid crystal display device comprising the same |
| abstract |
One of the problems is to simplify the photolithography step by reducing the number of exposure masks and to manufacture a semiconductor device having an oxide semiconductor at low cost and good productivity. A method of manufacturing a semiconductor device having a reverse-staggered thin film transistor of a channel etch structure, comprising the steps of: etching the oxide semiconductor film and the conductive film by using a mask layer formed by a multi-gradation mask which is an exposure mask having a plurality of intensities of transmitted light . In the etching step, the first etching step uses wet etching with an etching solution, and the second etching step uses dry etching with an etching gas. |
| priorityDate |
2008-10-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |