| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6b822ee046eb6c45d1e3bd9ce9c1782e |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1156
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B41-70 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7869
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78696
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1255
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1225
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C11-401
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78648
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78618
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78621
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-45
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4908 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-1156 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11C11-401 |
| filingDate |
2016-01-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2017-05-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a5a79f4c83d6887d5708274a362a3a58
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e3139340ae160e354c7b630af45bfe6c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b6f7418368268d22895eaa80616e6ff4
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_38050205e61f011eb34906e56715545f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_75da2ff27e697e8bf14a5ece3a7a97aa |
| publicationDate |
2017-05-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-9647132-B2 |
| titleOfInvention |
Semiconductor device and memory device |
| abstract |
A semiconductor device that can measure a minute current. The semiconductor device includes a first transistor, a second transistor, a node, and a capacitor. The first transistor includes an oxide semiconductor in a channel formation region. The node is electrically connected to a gate of the second transistor and a first terminal of the capacitor. The node is brought into an electrically floating state by turning off the first transistor after a potential V 0 is supplied. Change in a potential V FN of the node over time is expressed by Formula (1). In Formula (1), t is elapsed time after the node is brought into the electrically floating state, τ is a constant with a unit of time, and β is a constant greater than or equal to 0.4 and less than or equal to 0.6. n n n n n n n n n n V n FN n n n n ( n t n ) n n n = n n n V n 0 n n × n n ⅇ n n - n n n ( n n t n τ n n ) n n β n n n n n n n n n ( n 1 n ) |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2017338349-A1 |
| priorityDate |
2015-01-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |