http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20070019609-A
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-124 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-127 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78621 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42384 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66757 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F1-36 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F1-50 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1288 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F1-54 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0338 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1214 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027 |
| filingDate | 2006-08-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2007-02-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20070019609-A |
| titleOfInvention | Exposure mask and manufacturing method of semiconductor device using same |
| abstract | The present invention provides a semiconductor device manufacturing method in which the number of exposure steps (the number of masks) required for manufacturing a TFT substrate is reduced by the use of an exposure mask and an exposure mask capable of forming a photoresist layer of uniform thickness in the semi-transmissive portion. . An exposure mask is used, which includes a light transmitting portion, a semi-light transmitting portion and a light blocking portion, wherein the semi-light transmitting portion has a light intensity reduction function where lines and spaces are repeatedly formed, where the resolution of the exposure apparatus is represented by n. And when the projection magnification is expressed as 1 / m (m ≧ 1), the sum of the line width L of the light shielding material and the space width S between the light shielding materials at the semi-transmissive portion is a conditional expression (2n / 3) × m ≦ L + S ≤ (6n / 5) x m is satisfied.n n n n Semiconductor device manufacturing method, exposure apparatus, exposure mask, photoresist |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8367281-B2 |
| priorityDate | 2005-08-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 49.