| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6b822ee046eb6c45d1e3bd9ce9c1782e |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78621
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78648
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7869
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78696
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-24
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0886
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1225
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78603
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78606 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-24
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-088 |
| filingDate |
2015-05-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2018-09-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fa08dd1ce9b0d4cda7b7aef3d0448f94 |
| publicationDate |
2018-09-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-10084048-B2 |
| titleOfInvention |
Semiconductor device and electronic device including the semiconductor device |
| abstract |
A semiconductor device with favorable electrical characteristics is provided. Alternatively, a semiconductor device with a high on-state current is provided. Alternatively, a semiconductor device that is suitable for miniaturization is provided. A semiconductor device includes an oxide semiconductor, an insulating film, a gate insulating film, and a gate electrode. The oxide semiconductor includes a first portion and a second portion over the first portion. The insulating film includes a region in contact with a side surface of the first portion. The gate electrode includes a region that covers the second portion with the gate insulating film provided therebetween. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11742431-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11152513-B2 |
| priorityDate |
2014-05-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |