http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100686946-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1281 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78675 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G02F1-136 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78603 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66757 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1296 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78621 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78633 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G02F1-136 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-77 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-268 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 |
| filingDate | 2000-10-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2007-02-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2007-02-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-100686946-B1 |
| titleOfInvention | Semiconductor thin film substrate, semiconductor device, method of manufacturing semiconductor device and electronic device |
| abstract | BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor thin film substrate, a semiconductor device, a method for manufacturing a semiconductor device, and an electronic device, wherein a first thin film is formed on a surface of an insulating substrate and has a higher thermal conductivity than the first thin film. 2 thin films are formed, an amorphous semiconductor thin film having a higher thermal conductivity than the second thin film is formed on at least the second thin film, and the amorphous semiconductor thin film is converted into a polycrystalline semiconductor thin film by laser heating, and in the polycrystalline semiconductor thin film, The crystal grain diameter of is large and uniformized by providing the second thin film, and thus the projections are reduced, and a technique for providing a semiconductor device having a thin film transistor having high performance and high reliability and an electronic device incorporating the semiconductor device is proposed. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101051594-B1 |
| priorityDate | 1999-10-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 32.