http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2009194376-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6b822ee046eb6c45d1e3bd9ce9c1782e |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-458 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66772 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76254 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-84 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78621 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-268 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-265 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-12 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-20 |
| filingDate | 2009-01-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_679ab4f2c81a7322b56eff72834cf7c3 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_90a374176e49b6949d98fca23538a820 |
| publicationDate | 2009-08-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2009194376-A |
| titleOfInvention | Semiconductor substrate manufacturing equipment |
| abstract | A semiconductor substrate manufacturing apparatus capable of fixing a single crystal semiconductor layer to a base substrate with high accuracy even when a substrate having low heat resistance such as a glass substrate and being easily bent is used as the base substrate. A bonding surface between a base substrate and a single crystal semiconductor substrate in which an insulating layer functioning as a bonding layer is provided on the surface and an embrittlement region is provided in a region at a predetermined depth from the surface is cleaned. The cleaning part, the base substrate and the single crystal semiconductor substrate are bonded together, and the single crystal semiconductor substrate is heated by irradiating an electromagnetic wave having a frequency of 300 MHz to 300 GHz, and the single crystal semiconductor substrate is separated using the damaged region as a cleavage plane. The single crystal semiconductor layer separated from the single crystal semiconductor substrate is fixed on the base substrate using a semiconductor substrate manufacturing apparatus having a heat treatment portion for heat treating the single crystal semiconductor layer fixed to the base substrate. A semiconductor substrate is produced. [Selection] Figure 2 |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2015525964-A |
| priorityDate | 2008-01-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 49.