| abstract |
Provided are a semiconductor device in which defects and defects do not occur even when a ZnO film using a ZnO semiconductor film and n-type or p-type impurity is used for a source electrode and a drain electrode. This semiconductor device includes a gate insulating film formed of a silicon oxide film or a silicon oxynitride film on a gate electrode, an Al film or an Al alloy film on the gate insulating film, and an n-type or p-type impurity on the Al film or Al alloy film. The added ZnO film, and the ZnO semiconductor film on the ZnO film and the gate insulating film to which n-type or p-type impurities are added.n n n n Semiconductor device, Al film, Al alloy film, ZnO film, ZnO semiconductor film |