| abstract |
When laser annealing is performed using a CW laser or a pseudo CW laser, productivity is worse than that when an excimer laser is used. Therefore, further improvement in productivity is required. In the present invention, the laser light is used as a fundamental wave without passing through the nonlinear optical element, and the laser thin film is irradiated with a high intensity and high repetition frequency pulsed laser light to the semiconductor thin film. Since no nonlinear optical element is used and no harmonic is converted, a laser oscillator having a large output can be used for the laser annealing method. Therefore, the width of the area of the grain size crystal formed by one scan can be enlarged, so that the productivity can be significantly improved. |